InGaAs-on-Si photodetectors for high-sensitivity detection

M. Bitter, Z. Pan, S. Kristjansson, L. Boman, Robert Gold, A. Pauchard

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

We present results on InGaAs-on-Si p-i-n and avalanche photodiodes (APDs) fabricated using a high-yield, wafer-scale bonding process. High-resolution X-ray diffraction measurements indicate that the residual thermal strain in the InGaAs film is very low, and SIMS data show that the oxygen contamination at the bonded interface is about 3% of a monolayer. APD devices exhibiting a low dark current of 3.3nA at a gain of 50, a low breakdown voltage temperature dependency of 0.026V/°C, gain non-uniformity smaller than 3%, a bandwidth of 4.8GHz and a very low excess noise factor (k eff = 0.02), have been demonstrated. The devices also operate in Geiger mode with a dark count probability of 1E-3 at a single-photon quantum detection efficiency of 10% (without anti-reflection coating). We also report on high-speed, low dark current InGaAs-on-Si p-i-n devices having good linearity.

Original languageEnglish (US)
Pages (from-to)1-12
Number of pages12
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5406
Issue numberPART 1
DOIs
StatePublished - Dec 20 2004
Externally publishedYes
EventInfrared Technology and Applications XXX - Orlando, FL, United States
Duration: Apr 12 2004Apr 16 2004

Fingerprint

Avalanche photodiodes
InGaAs
Dark currents
Photodetector
Photodetectors
photometers
Avalanche Photodiode
Dark Current
dark current
Antireflection coatings
avalanches
photodiodes
sensitivity
Secondary ion mass spectrometry
Electric breakdown
Antireflection Coating
Noise Factor
Monolayers
Contamination
Photons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

InGaAs-on-Si photodetectors for high-sensitivity detection. / Bitter, M.; Pan, Z.; Kristjansson, S.; Boman, L.; Gold, Robert; Pauchard, A.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5406, No. PART 1, 20.12.2004, p. 1-12.

Research output: Contribution to journalConference article

Bitter, M. ; Pan, Z. ; Kristjansson, S. ; Boman, L. ; Gold, Robert ; Pauchard, A. / InGaAs-on-Si photodetectors for high-sensitivity detection. In: Proceedings of SPIE - The International Society for Optical Engineering. 2004 ; Vol. 5406, No. PART 1. pp. 1-12.
@article{bbfe6fac9730437ca51b6fa94eec8cd7,
title = "InGaAs-on-Si photodetectors for high-sensitivity detection",
abstract = "We present results on InGaAs-on-Si p-i-n and avalanche photodiodes (APDs) fabricated using a high-yield, wafer-scale bonding process. High-resolution X-ray diffraction measurements indicate that the residual thermal strain in the InGaAs film is very low, and SIMS data show that the oxygen contamination at the bonded interface is about 3{\%} of a monolayer. APD devices exhibiting a low dark current of 3.3nA at a gain of 50, a low breakdown voltage temperature dependency of 0.026V/°C, gain non-uniformity smaller than 3{\%}, a bandwidth of 4.8GHz and a very low excess noise factor (k eff = 0.02), have been demonstrated. The devices also operate in Geiger mode with a dark count probability of 1E-3 at a single-photon quantum detection efficiency of 10{\%} (without anti-reflection coating). We also report on high-speed, low dark current InGaAs-on-Si p-i-n devices having good linearity.",
author = "M. Bitter and Z. Pan and S. Kristjansson and L. Boman and Robert Gold and A. Pauchard",
year = "2004",
month = "12",
day = "20",
doi = "10.1117/12.541660",
language = "English (US)",
volume = "5406",
pages = "1--12",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",
number = "PART 1",

}

TY - JOUR

T1 - InGaAs-on-Si photodetectors for high-sensitivity detection

AU - Bitter, M.

AU - Pan, Z.

AU - Kristjansson, S.

AU - Boman, L.

AU - Gold, Robert

AU - Pauchard, A.

PY - 2004/12/20

Y1 - 2004/12/20

N2 - We present results on InGaAs-on-Si p-i-n and avalanche photodiodes (APDs) fabricated using a high-yield, wafer-scale bonding process. High-resolution X-ray diffraction measurements indicate that the residual thermal strain in the InGaAs film is very low, and SIMS data show that the oxygen contamination at the bonded interface is about 3% of a monolayer. APD devices exhibiting a low dark current of 3.3nA at a gain of 50, a low breakdown voltage temperature dependency of 0.026V/°C, gain non-uniformity smaller than 3%, a bandwidth of 4.8GHz and a very low excess noise factor (k eff = 0.02), have been demonstrated. The devices also operate in Geiger mode with a dark count probability of 1E-3 at a single-photon quantum detection efficiency of 10% (without anti-reflection coating). We also report on high-speed, low dark current InGaAs-on-Si p-i-n devices having good linearity.

AB - We present results on InGaAs-on-Si p-i-n and avalanche photodiodes (APDs) fabricated using a high-yield, wafer-scale bonding process. High-resolution X-ray diffraction measurements indicate that the residual thermal strain in the InGaAs film is very low, and SIMS data show that the oxygen contamination at the bonded interface is about 3% of a monolayer. APD devices exhibiting a low dark current of 3.3nA at a gain of 50, a low breakdown voltage temperature dependency of 0.026V/°C, gain non-uniformity smaller than 3%, a bandwidth of 4.8GHz and a very low excess noise factor (k eff = 0.02), have been demonstrated. The devices also operate in Geiger mode with a dark count probability of 1E-3 at a single-photon quantum detection efficiency of 10% (without anti-reflection coating). We also report on high-speed, low dark current InGaAs-on-Si p-i-n devices having good linearity.

UR - http://www.scopus.com/inward/record.url?scp=10044266620&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10044266620&partnerID=8YFLogxK

U2 - 10.1117/12.541660

DO - 10.1117/12.541660

M3 - Conference article

VL - 5406

SP - 1

EP - 12

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

IS - PART 1

ER -